Girish wadhwa | Neuroscience | Best Researcher Award

Dr. Girish wadhwa | Neuroscience | Best Researcher Award

Post doctoral Researcher at University of Ferrara, Italy

Dr. Girish Wadhwa is a dedicated and highly motivated researcher with a Ph.D. in VLSI Design from Dr. B R Ambedkar National Institute of Technology, Jalandhar. His doctoral research focused on the modeling, simulation, and design analysis of charge plasma-based dielectric modulated gate underlap Tunnel Field Effect Transistor (TFET) biosensors using Silvaco and Matlab/Maple. Dr. Wadhwa has significant expertise in semiconductor process engineering, nano processor and sensor design, and the study of graphene and 2D materials. His academic journey includes teaching roles at several prestigious institutions and current postdoctoral research at the University of Ferrara, Italy. He is known for his problem-solving abilities, leadership qualities, and outstanding management skills, contributing significantly to both academic and research environments.

Professional Profiles:

Education

Girish Wadhwa holds a Ph.D. in VLSI Design from Dr. B R Ambedkar National Institute of Technology, Jalandhar. His doctoral research focused on advanced methodologies and technologies in Very-Large-Scale Integration (VLSI) Design, contributing to the field’s knowledge and application. Prior to his Ph.D., he earned an M.Tech in VLSI Design from Maharishi Markandeshwar University, achieving a CGPA of 7.41. His master’s studies provided him with a strong foundation in VLSI design principles and practices. Girish’s academic journey began with a B.Tech in Electronics and Communication Engineering from Kurukshetra University, where he graduated with a 68% score. This undergraduate degree laid the groundwork for his specialization in electronics and communication, shaping his career path and research interests in VLSI design. His educational background reflects a solid and progressive engagement with electronic systems and integrated circuit design.

Professional Experience

Dr. Girish Wadhwa is currently serving as a Postdoctoral Researcher at the University of Ferrara, Italy, since October 1, 2023. Prior to this role, he was an Assistant Professor at Chitkara University from October 2022 to September 2023. His extensive teaching career includes positions as an Assistant Professor at NIT Jalandhar (September 2013 to December 2016), RPIIT (September 2012 to September 2013), MIET (August 2011 to August 2012), and GIMT Kanipla (July 2008 to August 2011). He began his academic career as a Lecturer at SKIET (August 2006 to May 2008). Dr. Wadhwa has a strong background in semiconductor nanodevice research, modeling and TCAD simulation, and digital circuit design using VHDL.

Research Interest

Girish Wadhwa specializes in semiconductor process engineering with a strong focus on modeling and simulation of semiconductor processes. His expertise encompasses reliability studies and failure analysis, crucial for optimizing semiconductor device performance and longevity. He is deeply involved in the design and development of nano processors and sensors, exploring cutting-edge technologies in this field. Wadhwa’s research includes advanced work on graphene and other 2D materials, which are pivotal for next-generation semiconductor applications. His work extends to nanoscale semiconductor devices, such as Nanowire FETs, Nanosheets FETs, and 2D materials, as well as Tunnel FETs (TFETs), vertical structures, organic FETs, FinFETs, carbon nanotubes (CNTs), and ferroelectric materials. His contributions are significant in advancing the development of high-performance, miniaturized semiconductor devices, enhancing both their efficiency and functionality in various applications.

Award and Honors

Dr. Girish Wadhwa has been recognized for his academic and teaching excellence throughout his career. He was awarded the Best Teacher Award at GIMT for the session 2010, highlighting his exceptional teaching skills and dedication. His research contributions have earned him accolades in the field of semiconductor devices, particularly for his work on charge plasma-based dielectric modulated gate underlap Tunnel Field Effect Transistor (TFET) biosensors. This research significantly advances biosensor technology, offering improved performance through innovative techniques. His contributions are widely acknowledged in the academic community, reflecting his expertise and commitment to advancing semiconductor and nanotechnology fields.

Research Skills

Dr. Girish Wadhwa demonstrates robust research skills in semiconductor process engineering and nanoscale device design. He excels in modeling and simulation using advanced tools like MATLAB, Maple, Silvaco, Cadence, Sentaurus, and PSPICE, facilitating precise analysis and design of semiconductor devices. His expertise extends to digital circuit design with VHDL, enhancing his capability to develop and optimize complex circuits. Dr. Wadhwa’s research involves a deep understanding of nanoscale semiconductor devices, including Nanowire FETs, Nanosheets FETs, TFETs, and 2D materials. His work in reliability study, failure analysis, and sensor design highlights his ability to address critical challenges in semiconductor technology. Proficient in analyzing device performance and reliability, he adeptly employs modeling techniques to improve device efficiency and functionality. His skills contribute significantly to advancing knowledge in semiconductor processes and nanotechnology.

Publications
  1. Recent Advances and Progress in the Development of the Field Effect Transistor Biosensor: A Review
    • Authors: T. Wadhera, D. Kakkar, G. Wadhwa, B. Raj
    • Journal: Journal of Electronic Materials
    • Volume: 48
    • Pages: 7635-7646
    • Year: 2019
    • Citations: 166
  2. Label-Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET
    • Authors: G. Wadhwa, B. Raj
    • Journal: Journal of Electronic Materials
    • Volume: 47
    • Pages: 4683-4693
    • Year: 2018
    • Citations: 135
  3. Design, Simulation, and Performance Analysis of JLTFET Biosensor for High Sensitivity
    • Authors: G. Wadhwa, B. Raj
    • Journal: IEEE Transactions on Nanotechnology
    • Volume: 18
    • Pages: 567-574
    • Year: 2019
    • Citations: 120
  4. Parametric Variation Analysis of Symmetric Double Gate Charge Plasma JLTFET for Biosensor Application
    • Authors: G. Wadhwa, B. Raj
    • Journal: IEEE Sensors Journal
    • Volume: 18
    • Issue: 15
    • Pages: 6070-6077
    • Year: 2018
    • Citations: 76
  5. Design and Analysis of Dual Source Vertical Tunnel Field Effect Transistor for High Performance
    • Authors: S. Badgujjar, G. Wadhwa, S. Singh, B. Raj
    • Journal: Transactions on Electrical and Electronic Materials
    • Volume: 21
    • Pages: 74-82
    • Year: 2020
    • Citations: 61

Tesfaye Abebe Geleta | Chemistry Department | Best Researcher Award

Dr. Tesfaye Abebe Geleta | Chemistry Department | Best Researcher Award

Postdoctoral Research Fellow at National Taiwan University, Taiwan

Dr. Tesfaye Abebe Geleta is a Postdoctoral Research Fellow at National Taiwan University, specializing in photocatalysis and environmental remediation. His research focuses on the photocatalytic activity of perovskite/graphitic carbon nitride heterojunctions for degrading pollutants. With a strong background in computational simulations and density functional theory (DFT), Dr. Geleta also has extensive experience in materials characterization using various analytical techniques, including XRD, TEM, and SEM. His previous roles include Senior Application Engineer at MacDermid Alpha Electronics Solutions and Research Assistant at Chung Yuan Christian University. Dr. Geleta holds a Ph.D. in Solar Energy Harvesting from National Taiwan University of Science and Technology, an M.Sc. in Quantum Optics from Addis Ababa University, and a B.Sc. in Physics from Wollega University. His expertise extends to nanomaterials synthesis, renewable energy technologies, and advanced membrane technologies.

Professional Profiles:

Education

Dr. Tesfaye Abebe Geleta earned his Ph.D. in Applied Science & Technology from the National Taiwan University of Science & Technology in Taipei, Taiwan, where he focused on ZnO-Based Dye-Sensitized Solar Cells, particularly the effects of additives. Prior to this, he completed his M.Sc. in Quantum Optics at Addis Ababa University in Ethiopia, which provided him with a strong foundation in quantum physics. His academic journey began with a B.Sc. in Physics from Wollega University, also in Ethiopia. His extensive education equips him with expertise in photovoltaic materials, quantum optics, and advanced computational techniques, supporting his research and professional work in energy harvesting, photocatalysis, and membrane technology.

Professional Experience

Dr. Tesfaye Abebe Geleta is currently a Postdoctoral Research Fellow at National Taiwan University, where he focuses on the photocatalytic activity of perovskite/graphitic carbon nitride heterojunctions for environmental remediation. Before this, he worked as a Senior Application Engineer at MacDermid Alpha Electronics Solutions, specializing in surface modification of printed circuit boards (PCBs) and final finishing technologies. His earlier roles include a Research Assistant at the R&D Center for Membrane Technology at Chung Yuan Christian University, where he explored antifouling membranes, and a Lecturer in Quantum Physics at Bule Hora University in Ethiopia. He also has experience as a Physics Teacher at Hinde Secondary and Preparatory School. His diverse professional background spans academia, industry, and research, reflecting a strong focus on energy solutions, material science, and environmental technologies.

Research Interest

Dr. Tesfaye Abebe Geleta’s research interests encompass a range of advanced material sciences and energy technologies. His current work at National Taiwan University focuses on photocatalysis, specifically using perovskite/graphitic carbon nitride heterojunctions for environmental remediation. He employs density functional theory (DFT) and computational simulations to enhance photocatalytic efficiency. Additionally, he has a strong background in photovoltaic technologies, including dye-sensitized and perovskite solar cells, and membrane technology. His previous research includes quantum optics and the development of antifouling membranes. Dr. Geleta’s work integrates theoretical and practical approaches to address challenges in renewable energy and environmental sustainability.

Ā Award and Honors

Dr. Tesfaye Abebe Geleta has received several notable awards and honors throughout his career. In January 2023, he was recognized as a member of the Technical Program Committee for the 2nd International Conference on Smart Grid and Green Energy (ICSGGE 2023) in China. In October 2022, he was awarded a Certificate of Completion for his participation in clean ocean protection activities by MacDermid Alpha Electronics Solutions. Additionally, he received a Social Service Certificate in June 2021 from National Taiwan University for his contribution to the i-Village Digital Learning Companion Project. His achievements reflect his commitment to both his research and community service.

Research Skills

Dr. Tesfaye Abebe Geleta possesses a diverse set of research skills, including expertise in photocatalysis, computational simulations, and renewable energy technologies. He is proficient in density functional theory (DFT) and computational tools such as Quantum Espresso, CASTEP, and WIEN2k for electronic structure calculations. His technical skills encompass the characterization of materials using XRD, TEM, SEM, FTIR, and UV-Vis spectroscopy. Dr. Geleta has hands-on experience with membrane technology, including VIPS and NIPS methods, and is skilled in the synthesis and analysis of nanomaterials. Additionally, he is adept in liquid and gas chromatography, corrosion analysis, and surface roughness evaluation. His research also includes advanced knowledge in solar cell technologies, such as dye-sensitized and perovskite solar cells.

Publications

  1. Nanocomposite Photoanodes Consisting of p-NiO/n-ZnO Heterojunction and Carbon Quantum Dot Additive for Dye-Sensitized Solar Cells
    • Authors: T.A. Geleta, T. Imae
    • Year: 2021
    • Citations: 44
    • Journal: ACS Applied Nano Materials, 4 (1), 236-249
  2. Recent Advances on the Fabrication of Antifouling Phase-Inversion Membranes by Physical Blending Modification Method
    • Authors: T.A. Geleta, I.V. Maggay, Y. Chang, A. Venault
    • Year: 2023
    • Citations: 35
    • Journal: Membranes, 13 (1), 58
  3. Influence of Additives on Zinc Oxide-Based Dye-Sensitized Solar Cells
    • Authors: T.A. Geleta, T. Imae
    • Year: 2020
    • Citations: 23
    • Journal: Bulletin of the Chemical Society of Japan, 93 (4), 611-620
  4. Effect of Carbon Dots on Supercapacitor Performance of Carbon Nanohorn/Conducting Polymer Composites
    • Authors: C.C. Chang, T.A. Geleta, T. Imae
    • Year: 2021
    • Citations: 18
    • Journal: Bulletin of the Chemical Society of Japan, 94 (2), 454-462
  5. Using the Dimethyl Sulfoxide Green Solvent for the Making of Antifouling PEGylated Membranes by the Vapor-Induced Phase Separation Process
    • Authors: A. Venault, H.N. Aini, T.A. Galeta, Y. Chang
    • Year: 2022
    • Citations: 8
    • Journal: Journal of Membrane Science Letters, 2 (2), 100025
  6. Engineering Sterilization-Resistant and Fouling-Resistant Porous Membranes by the Vapor-Induced Phase Separation Process Using a Sulfobetaine Methacrylamide Amphiphilic Derivative
    • Authors: A. Venault, R.J. Zhou, T.A. Galeta, Y. Chang
    • Year: 2022
    • Citations: 8
    • Journal: Journal of Membrane Science, 658, 120760
  7. First-Principle Analysis of Optical and Thermoelectric Properties in Alkaline-Based Perovskite Compounds AInCl3 (Aā€‰=ā€‰K, Rb)
    • Authors: D. Behera, T.A. Geleta, I. Allaoui, M. Khuili, S.K. Mukherjee, B. Akila, S. Al-Qaisi
    • Year: 2024
    • Citations: 7
    • Journal: The European Physical Journal Plus, 139 (2), 127
  8. Studies on Optoelectronic and Transport Properties of XSnBr3 (X = Rb/Cs): A DFT Insight
    • Authors: D. Behera, B. Akila, S.K. Mukherjee, T.A. Geleta, A. Shaker, M.M. Salah
    • Year: 2023
    • Citations: 7
    • Journal: Crystals, 13 (10), 1437
  9. Exploring the Mechanical, Vibrational Optoelectronic, and Thermoelectric Properties of Novel Half-Heusler FeTaX (X = P, As): A First-Principles Study
    • Authors: T.A. Geleta, D. Behera, R. Sharma, M. Mana Al-Anazy, V. Srivastava, et al.
    • Year: 2024
    • Citations: 3
    • Journal: RSC Advances, 14 (6), 4165-4178
  10. A Copolymer Derivative of Poly(4-vinylpyridine propylsulfobetaine) for the Design of Thermostable Bioinert Poly(vinylidene difluoride) Microporous Membranes by Vapor-Induced Phase Separation
    • Authors: A. Venault, T.A. Geleta, T.Y. Chiu, H.T. Lin, I.V. Maggay, Y. Chang
    • Year: 2023
    • Citations: 2
    • Journal: Separation and Purification Technology, 325, 124686