Hamed Mohammadi | Semiconductor | Best Researcher Award

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Dr. Hamed Mohammadi | Semiconductor | Best Researcher Award

Author of Free Researcher, Iran.

Dr. Hamed Mohammadi is a dedicated and accomplished researcher specializing in semiconductor physics and device simulation. With a background in electronic engineering, he has focused his career on advancing the understanding and application of semiconductor devices, particularly transistors. Dr. Mohammadi’s expertise lies in using Silvaco TCAD software for transistor simulation, enabling him to optimize device performance and explore novel design concepts. Throughout his academic journey, Dr. Mohammadi has contributed significantly to the field, with several published research articles in renowned journals and conference proceedings. His work revolves around investigating semiconductor materials, device physics, and advanced modeling techniques to enhance semiconductor device performance and reliability.

Professional Profiles:

Education

Dr. Hamed Mohammadi pursued his Master of Engineering in Electronic Engineering at Azad University Kermanshah, Iran, from June 2015 to June 2018. During this program, he focused on advancing his expertise in electronic engineering, with a particular emphasis on semiconductor elements and simulation techniques. His academic journey equipped him with the skills and knowledge necessary to engage in research and investigation related to semiconductor technology. Dr. Mohammadi’s educational background underscores his commitment to advancing the field of electronic engineering through rigorous academic study and practical application.

Professional Experience

Dr. Hamed Mohammadi has a diverse professional experience that spans over a decade, reflecting his dedication to the field of electronic engineering. From August 2010 to February 2021, he worked as a waiter in Sonqor, Iran, demonstrating his early commitment to employment and service. Concurrently, Dr. Mohammadi engaged in research and simulation work related to transistors, utilizing Silvaco software. This research led to the publication of four articles on transistor technology, showcasing his expertise and contributions to the field. Dr. Mohammadi’s career trajectory demonstrates a blend of practical experience in service and hospitality alongside a strong focus on academic research and engineering simulation. His work in both sectors underscores his versatility and commitment to professional growth and development.

Research Interest

Dr. Hamed Mohammadi’s research interests lie in the field of semiconductor devices and electronic engineering. Specifically, he is focused on investigating semiconductor elements, with a particular emphasis on transistors. His interest extends to the simulation of semiconductor devices using tools such as Silvaco TCAD software. Through his research, Dr. Mohammadi aims to explore the behavior, characteristics, and performance optimization of transistors and other semiconductor components. Furthermore, Dr. Mohammadi is passionate about advancing knowledge in semiconductor physics and technology, seeking to contribute to innovations that enhance the efficiency and functionality of electronic devices. His research interests reflect a commitment to pushing the boundaries of semiconductor engineering and its applications in various technological domains.

Award and Honors

Dr. Hamed Mohammadi has garnered several prestigious awards and honors throughout his career in semiconductor research and engineering. Notably, he has been recognized with the Outstanding Research Contribution Award for his significant impact on the field of semiconductor devices and electronic engineering. Additionally, Dr. Mohammadi has received Best Paper Awards for his exceptional research papers published in esteemed journals and presented at international conferences. His achievements also include the Research Excellence Award, which underscores his outstanding contributions to research, particularly in transistor simulation and semiconductor physics. These accolades highlight Dr. Mohammadi’s dedication, expertise, and profound impact on advancing semiconductor technology and contributing to the academic and research community.

Research Skills

Dr. Hamed Mohammadi is a highly skilled researcher specializing in semiconductor physics and transistor simulation. He has extensive experience in utilizing Silvaco TCAD software for transistor simulation, enabling precise analysis and optimization of semiconductor devices. With a deep understanding of semiconductor materials and device physics, Dr. Mohammadi conducts innovative research in semiconductor device design and characterization. His academic prowess is evident through his publication record, having authored and co-authored multiple research articles in esteemed journals and conference proceedings. Dr. Mohammadi is proficient in experimental design, employing rigorous methods to validate theoretical models and enhance semiconductor device performance. Additionally, he possesses strong data analysis skills, which are instrumental in interpreting experimental results and deriving meaningful insights. Dr. Mohammadi’s problem-solving abilities and analytical skills equip him to tackle complex challenges in semiconductor technology. His research skills underscore his potential to make significant contributions to the field and collaborate effectively within interdisciplinary research teams.

Publications

  1. Publication Title: “Optimizing SOI-MESFET transistor performance at high frequencies by air-oxide layers in the channel and a nickel layer in the box”
    • Authors: Mohammadi, H.; Mohammadi, Y.
    • Journal: Physics Open, 2024, 19, 100214
    • Citations: 0
  2. Publication Title: “Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance”
    • Authors: Naderi, A.; Mohammadi, H.
    • Journal: European Physical Journal Plus, 2021, 136(6), 662
    • Citations: 4
  3. Publication Title: “High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region”
    • Authors: Naderi, A.; Mohammadi, H.
    • Journal: European Physical Journal Plus, 2018, 133(6), 221
    • Citations: 8
  4. Publication Title: “A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications”
    • Authors: Mohammadi, H.; Naderi, A.
    • Journal: AEU – International Journal of Electronics and Communications, 2018, 83, pp. 541–548
    • Citations: 21