Mr. Yuxiang Zhang is a dedicated researcher specializing in GaN-based power semiconductor devices, with expertise in fabrication technology, electrical characterization, and device optimization. His research primarily focuses on AlGaN/GaN heterojunctions and P-GaN HEMTs, where he has developed innovative low-damage etching processes, metal-free ohmic contacts, and self-aligned gate etching techniques. Currently, he is working at the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, contributing to advanced semiconductor processing and reliability improvements. With a strong technical background in semiconductor manufacturing, electrical testing, and simulation, he has accumulated extensive hands-on experience in cleanroom environments. Beyond technical expertise, he has demonstrated leadership skills through student roles and has received multiple awards for academic excellence. His commitment to innovation, problem-solving, and collaboration makes him a strong candidate for research awards. He aims to advance semiconductor technology by bridging theoretical research with practical applications in power electronics, RF devices, and energy-efficient semiconductor solutions.
Professional Profile
Education
Mr. Yuxiang Zhang holds a Master’s Degree in Electronic Information from Hangzhou Dianzi University, where he specializes in power semiconductor devices and fabrication technologies. He began his academic journey with a Bachelor’s Degree in IoT Engineering from Jiangsu University of Technology, focusing on semiconductor physics, circuit design, and microelectronics. His educational background has provided him with a strong foundation in semiconductor manufacturing, electrical characterization, and device reliability assessment. During his studies, he has conducted cutting-edge research on AlGaN/GaN heterojunctions, P-GaN HEMTs, and advanced etching processes, enhancing his expertise in fabrication and process optimization. In addition to his research, he has actively engaged in academic leadership roles, demonstrating teamwork, communication, and problem-solving skills. His education has shaped him into a highly skilled researcher with both theoretical knowledge and practical experience, preparing him for a promising career in semiconductor technology and power electronics.
Professional Experience
Mr. Yuxiang Zhang has accumulated extensive research and industry experience in semiconductor fabrication and device characterization. Since August 2023, he has been working as a researcher at the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, where he develops low-damage etching techniques, self-aligned gate-first etching processes, and reliability optimization methods for GaN-based power devices. Before joining SINANO, he conducted research at Hangzhou Dianzi University, focusing on P-GaN HEMTs reliability, plasma treatment techniques, and gate structure enhancements. His hands-on experience includes photolithography, etching, ion implantation, thin-film deposition, and electrical characterization, making him highly proficient in semiconductor processing. He also worked as an intern at Jiangsu University of Technology’s Semiconductor Fabrication Lab, where he gained expertise in material analysis, device testing, and failure analysis. His professional background reflects a strong technical foundation, research innovation, and practical problem-solving abilities, positioning him as a rising expert in semiconductor technology.
Research Interests
Mr. Yuxiang Zhang’s research interests focus on GaN-based semiconductor devices and advanced fabrication technologies. His primary area of expertise lies in AlGaN/GaN heterojunction power devices, where he explores low-damage etching techniques, metal-free ohmic contact formation, and self-aligned gate-first etching processes to improve device efficiency and reliability. He is also deeply involved in P-GaN HEMTs research, investigating plasma treatment methods, gate reliability improvements, and threshold voltage stability enhancements. Additionally, he has a strong interest in semiconductor processing innovations, including dry etching, wet etching, and plasma-assisted treatments. His research also extends to device simulation and modeling, utilizing TCAD tools to analyze device behavior, failure mechanisms, and performance optimization strategies. By integrating theoretical knowledge with practical applications, he aims to contribute to the development of next-generation power electronics and RF semiconductor devices that offer higher efficiency, lower power loss, and improved reliability.
Research Skills
Mr. Yuxiang Zhang possesses a diverse and advanced set of research skills in semiconductor technology, device fabrication, and electrical characterization. His expertise includes photolithography, ion implantation, thin-film deposition, dry and wet etching, and plasma-assisted processing, making him highly proficient in fabrication techniques. In device characterization and testing, he has experience with static I-V and C-V measurements, gate reliability testing, time-dependent failure analysis (TTF, FPE), and leakage current assessments, enabling him to analyze device performance and reliability effectively. He is also skilled in semiconductor simulation and modeling, utilizing L-Edit and TCAD simulations to study device behavior and optimize fabrication processes. Furthermore, he has extensive knowledge in advanced material analysis techniques, including SEM, XRD, AFM, SIMS, FIB, and EDS, allowing for precise structural and compositional analysis of semiconductor materials. His strong problem-solving abilities, technical innovation, and hands-on experience in semiconductor research make him a highly capable researcher in the field of power electronics.
Awards and Honors
Mr. Yuxiang Zhang has been recognized for his outstanding academic performance and research contributions in semiconductor technology. He has received multiple academic scholarships for excellence in semiconductor research and coursework, demonstrating his strong theoretical knowledge and technical expertise. He was awarded the Outstanding Researcher Award at Hangzhou Dianzi University for his significant contributions to GaN-based power devices. Additionally, he has been recognized for his excellence in semiconductor fabrication at SINANO, where he played a key role in developing self-aligned etching techniques and reliability optimization processes. He has also received leadership recognition for his active participation in student organizations, highlighting his teamwork, communication, and organizational skills. His dedication to advancing semiconductor technology and power electronics has earned him a reputation as a highly skilled and innovative researcher, making him a strong contender for prestigious research awards.
Conclusion
Mr. Yuxiang Zhang is a highly skilled and innovative researcher specializing in GaN-based semiconductor devices and advanced fabrication technologies. His expertise in low-damage etching, metal-free ohmic contacts, and self-aligned gate-first etching has contributed to significant advancements in power semiconductor devices. With extensive hands-on experience in cleanroom fabrication, electrical characterization, and device optimization, he has demonstrated strong technical capabilities and research excellence. His ability to integrate theoretical research with practical applications makes him a valuable asset in the field of power electronics and semiconductor technology. Beyond his technical expertise, he has showcased leadership, teamwork, and problem-solving abilities, making him a well-rounded researcher. Moving forward, his focus on high-impact publications, interdisciplinary collaborations, and technology commercialization will further establish him as a leading expert in semiconductor research. His dedication to innovation, efficiency, and reliability improvements positions him as a worthy candidate for the Best Researcher Award, with the potential to make groundbreaking contributions to next-generation semiconductor technology.