Saif Rahman | Solid State Electronics | Best Researcher Award

Dr. Saif Rahman | Solid State Electronics | Best Researcher Award

Postdoc Researcher from Xian Jiaotong Liverpool University, China

Dr. Saif Ur Rehman is a distinguished researcher and academic professional specializing in solid-state electronics, photonics, and wide bandgap semiconductor materials. With a PhD in Electrical Engineering and two postdoctoral tenures at premier Chinese research institutes, including the Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) and Xi’an Jiaotong-Liverpool University, Dr. Rehman brings extensive experience in both theoretical and applied aspects of electrical and electronics engineering. He has over a decade of teaching and research experience at reputable institutions in Pakistan and China. His career reflects a strong commitment to interdisciplinary innovation, bridging electrical engineering with materials science and photonic technologies. He has led and participated in several government-funded research projects, supervised multiple MS and PhD theses, and played vital roles in academic program management and university-industry collaboration. Dr. Rehman’s research interests lie at the intersection of next-generation electronic devices and materials, aiming to address global technological challenges through practical applications. His contributions extend beyond research into academic leadership, curriculum development, and organizing scientific conferences. Recognized by international fellowship programs and national academic bodies, Dr. Saif Ur Rehman continues to inspire innovation and excellence in the field of electronics and communication technologies.

Professional Profile

Education

Dr. Saif Ur Rehman has an extensive academic background in electrical and electronics engineering, beginning with a Bachelor of Science in Electronics Engineering from Mohammad Ali Jinnah University, Islamabad, completed in 2010. He then pursued a Master’s degree in Electronics Engineering at the same university, graduating in 2012, where he honed his expertise in circuit design, communication systems, and semiconductor technology. He further advanced his academic journey with a PhD in Electrical Engineering from Capital University, Islamabad, which he completed in 2019. His doctoral research laid the groundwork for his specialization in wide bandgap materials and device modeling, positioning him as a leading researcher in the field. Following his PhD, Dr. Rehman engaged in two prestigious postdoctoral research appointments. From 2022 to 2023, he served as a Postdoctoral Research Associate at the GPL Photonics Lab, CIOMP, Chinese Academy of Sciences, where he worked on 2D and UWBG materials for photonics. In 2025, he began another postdoctoral tenure at Xi’an Jiaotong-Liverpool University, focusing on cutting-edge photonic and semiconductor technologies. This strong educational foundation, coupled with specialized international research training, has equipped Dr. Rehman with a deep understanding of both the theoretical and applied dimensions of modern electrical and electronic engineering.

Professional Experience

Dr. Saif Ur Rehman’s professional journey spans over 14 years across teaching, research, and leadership roles in academic and research institutions. He is currently serving as a Postdoctoral Researcher at the School of Advanced Technology, Xi’an Jiaotong-Liverpool University, China. Prior to this, he completed a one-year postdoctoral fellowship at the renowned GPL Photonics Lab at CIOMP, Chinese Academy of Sciences, where he worked on photonics and ultrawide bandgap materials. Between 2015 and 2024, Dr. Rehman held a significant academic role as Assistant Professor at the Faculty of Engineering, Superior University Lahore. In this position, he led several initiatives, serving as Program Manager for Biomedical Engineering and Postgraduate Programs, and acting as the focal person for the ORIC and National ICT Research Initiative projects. Earlier, he served as Lecturer in the Electrical Engineering Department at the University of Lahore (Islamabad Campus) from 2011 to 2015. Throughout his career, he has also contributed to student mentorship, final year project coordination, lab management, and industrial-academic linkages. His well-rounded experience in both teaching and research makes him a valuable asset to any academic or R&D institution aiming to foster innovation in engineering and advanced materials.

Research Interests

Dr. Saif Ur Rehman’s research interests span a wide range of topics at the forefront of electrical and electronics engineering, with particular focus on semiconductor devices and photonics. He specializes in Silicon Carbide (SiC) MESFETs, including AC and DC analysis, and nonlinear device modeling. His work on 2D and ultra-wide bandgap (UWBG) materials plays a crucial role in next-generation photonic devices and laser-matter interaction studies. Dr. Rehman is also actively engaged in research on microwave and millimeter-wave Monolithic Microwave Integrated Circuit (MMIC) design, an essential component of advanced communication systems. He is deeply involved in the design and simulation of advanced heterojunction microwave circuits, temperature-dependent device analysis, and FinFET negative capacitance analysis. His academic and applied research endeavors also explore the integration of machine learning with smart grid converters, the performance of electric vehicles using wide bandgap materials, and the optimization of distributed generation systems. With a multidisciplinary approach that includes mathematical modeling, simulation, and optimal circuit design, Dr. Rehman’s research contributes significantly to the development of more efficient, scalable, and high-performance electronic systems and devices for emerging applications in energy, communication, and computing.

Research Skills

Dr. Saif Ur Rehman brings a robust set of research skills that reflect his deep engagement with advanced technologies in electronics, photonics, and semiconductor devices. He is proficient in analytical modeling and nonlinear circuit simulation, with extensive experience in software tools such as MATLAB, OriginLab, Advanced Design System (ADS), and Circuit Maker. His skills also extend to photonic device analysis, microstrip patch antenna design, and wide bandgap semiconductor characterization. During his postdoctoral research, he gained hands-on expertise in photonics lab experiments, focusing on 2D materials and their applications in ultrafast optics. Dr. Rehman is adept at mathematical modeling and optimization techniques, essential for improving performance and efficiency in smart grid systems, electric vehicle converters, and communication circuits. His programming capabilities in Python, combined with foundational knowledge from online courses in data science and design thinking, enable him to bridge engineering innovation with user-centric development. Additionally, his technical report writing and scientific communication skills are strong, as evidenced by his leadership in funded research projects and student supervision. These diverse research competencies allow him to address complex engineering problems with innovative, practical, and scalable solutions across various domains.

Awards and Honors

Dr. Saif Ur Rehman has received several prestigious awards and honors that underline his academic excellence and research impact. Most notably, he was awarded the CAS President’s International Fellowship Initiative (PIFI), a highly competitive grant supporting advanced research in China. This opportunity enabled him to work at the Changchun Institute of Optics, Fine Mechanics and Physics on a project involving 2D and UWBG materials for photonics, with a significant funding of 6 million RMB. He is also recognized as a Higher Education Commission (HEC) Approved PhD Supervisor in Pakistan, affirming his credibility in postgraduate academic mentoring. Dr. Rehman served as a Focal Person for various national research initiatives including the National Grassroots ICT Research Initiative and the Office of Research, Innovation and Commercialization (ORIC), playing a key role in securing and executing research projects. His participation as a speaker at international conferences such as the Saudi Arabia Smart Grid Conference (SASG 2019) and technical contributions to events like IEECON and ICEET further reflect his active engagement in the global research community. His involvement in academic committees, conference organization, and industrial-academic partnerships highlight his commitment to collaborative innovation and knowledge dissemination.

Conclusion

Dr. Saif Ur Rehman stands out as a dynamic and accomplished researcher whose contributions to electrical engineering, photonics, and semiconductor technology are both impactful and forward-thinking. His educational journey from undergraduate to postdoctoral levels showcases a clear trajectory of academic excellence, while his professional experience across institutions in Pakistan and China reflects versatility and global engagement. He combines a strong theoretical foundation with practical research, evident from his work on wide bandgap materials, smart grid solutions, and microwave device modeling. His leadership in managing academic programs and securing national research funding underscores his strategic thinking and project management capabilities. Moreover, his active supervision of postgraduate students, participation in international forums, and consistent commitment to learning through specialized courses reveal a researcher committed to lifelong development and academic excellence. With his broad skillset, international exposure, and contributions to both research and teaching, Dr. Rehman is exceptionally well-positioned for recognition through the Best Researcher Award. His career reflects a harmonious balance of innovation, collaboration, and service to the scientific and academic communities, making him a valuable contributor to the global advancement of engineering and applied sciences.

Publications Top Notes

  1. An Enhanced Convolutional Neural Network (CNN) based P-EDR Mechanism for Diagnosis of Diabetic Retinopathy (DR) using Machine Learning

Authors: Hussain, M.; Ahmed, H.A.; Babar, M.Z.; Ali, A.; Shahzad, H.M.; Rehman, S.U.; Khan, H.; Alshahrani, A.M.
Year: 2025

2. Impact of Bidirectional Semiconductor Devices on DC and Hybrid Microgrids Enhanced by Wide Bandgap Materials

Authors: Abdul Waheed; Saif ur Rahman; Raheem Sarwar
Year: 2025

3. A Machine Learning-based Solution for Monitoring of Converters in Smart Grid Application

Authors: Umaiz Sadiq; Fatma Mallek; Saif Ur Rehman; Rao Muhammad Asif; Ateeq Ur Rehman; Habib Hamam
Year: 2024

4. Advancing Wearables: Dual-Band Antenna Design with High Permittivity Miniaturization using Natural Substrate

Authors: Arshad, S.; Rehman, S.U.; Ibrar, M.; Ellahi, M.
Year: 2024

5. An Efficient Technique to Simulate the AC/DC Parameters of Trigate FinFETs

Authors: Qamar ud Din Memon; Saif Rehman; Muhammad Adil Bashir; Noor Muhammad Memon; Mohd Anul Haq; Sultan Alharby; Ahmed Alhussen; Ateeq Ur Rehman
Year: 2024

6. Hybrid multimodule DC–DC converters accelerated by wide bandgap devices for electric vehicle systems

Authors: Abdul Waheed; Saif ur Rehman; Faisal Alsaif; Shoaib Rauf; Ismail Hossain; Mukesh Pushkarna; Fsaha Mebrahtu Gebru
Year: 2024

7. Optimal Locating and Sizing of DG in Radial Distribution System Using Modified Shuffled Frog Leaping Algorithm

Authors: Rao Muhammad Asif; Ateeq Ur Rehman; Naif Alsharabi; Sajjad Rabbani; Mustafa Shakir; Nauman Malik; Saif Ur Rehman; Arfat Ahmad Khan
Year: 2022

8. Efficient Electric Vehicle Charger Based on Wide Band-gap Materials for V2G and G2V

Authors: A. Waheed; S. Rehman; M. W. Hassan; U. Sadiq; M. Asif
Year: 2022

9. Performance comparison of structured H ∞ based looptune and LQR for a 4-DOF robotic manipulator

Authors: Arafat Asghar; Muhammad Iqbal; Abdul Khaliq; Saif ur Rehman; Jamshed Iqbal; Qichun Zhang
Year: 2022

10. Fault Interruption Scheme for HVDC System Using SiC-MESFET and VCB Based Hybrid Circuit Breaker

Authors: Waheed A. Khan; Ali Raza; Muhammad Rehan Usman; Shahzaib Hamid; Saif Rehman; Arslan; Christos Politis
Year: 2021

Hamed Mohammadi | Semiconductor | Best Researcher Award

Dr. Hamed Mohammadi | Semiconductor | Best Researcher Award

Author of Free Researcher, Iran.

Dr. Hamed Mohammadi is a dedicated and accomplished researcher specializing in semiconductor physics and device simulation. With a background in electronic engineering, he has focused his career on advancing the understanding and application of semiconductor devices, particularly transistors. Dr. Mohammadi’s expertise lies in using Silvaco TCAD software for transistor simulation, enabling him to optimize device performance and explore novel design concepts. Throughout his academic journey, Dr. Mohammadi has contributed significantly to the field, with several published research articles in renowned journals and conference proceedings. His work revolves around investigating semiconductor materials, device physics, and advanced modeling techniques to enhance semiconductor device performance and reliability.

Professional Profiles:

Education

Dr. Hamed Mohammadi pursued his Master of Engineering in Electronic Engineering at Azad University Kermanshah, Iran, from June 2015 to June 2018. During this program, he focused on advancing his expertise in electronic engineering, with a particular emphasis on semiconductor elements and simulation techniques. His academic journey equipped him with the skills and knowledge necessary to engage in research and investigation related to semiconductor technology. Dr. Mohammadi’s educational background underscores his commitment to advancing the field of electronic engineering through rigorous academic study and practical application.

Professional Experience

Dr. Hamed Mohammadi has a diverse professional experience that spans over a decade, reflecting his dedication to the field of electronic engineering. From August 2010 to February 2021, he worked as a waiter in Sonqor, Iran, demonstrating his early commitment to employment and service. Concurrently, Dr. Mohammadi engaged in research and simulation work related to transistors, utilizing Silvaco software. This research led to the publication of four articles on transistor technology, showcasing his expertise and contributions to the field. Dr. Mohammadi’s career trajectory demonstrates a blend of practical experience in service and hospitality alongside a strong focus on academic research and engineering simulation. His work in both sectors underscores his versatility and commitment to professional growth and development.

Research Interest

Dr. Hamed Mohammadi’s research interests lie in the field of semiconductor devices and electronic engineering. Specifically, he is focused on investigating semiconductor elements, with a particular emphasis on transistors. His interest extends to the simulation of semiconductor devices using tools such as Silvaco TCAD software. Through his research, Dr. Mohammadi aims to explore the behavior, characteristics, and performance optimization of transistors and other semiconductor components. Furthermore, Dr. Mohammadi is passionate about advancing knowledge in semiconductor physics and technology, seeking to contribute to innovations that enhance the efficiency and functionality of electronic devices. His research interests reflect a commitment to pushing the boundaries of semiconductor engineering and its applications in various technological domains.

Award and Honors

Dr. Hamed Mohammadi has garnered several prestigious awards and honors throughout his career in semiconductor research and engineering. Notably, he has been recognized with the Outstanding Research Contribution Award for his significant impact on the field of semiconductor devices and electronic engineering. Additionally, Dr. Mohammadi has received Best Paper Awards for his exceptional research papers published in esteemed journals and presented at international conferences. His achievements also include the Research Excellence Award, which underscores his outstanding contributions to research, particularly in transistor simulation and semiconductor physics. These accolades highlight Dr. Mohammadi’s dedication, expertise, and profound impact on advancing semiconductor technology and contributing to the academic and research community.

Research Skills

Dr. Hamed Mohammadi is a highly skilled researcher specializing in semiconductor physics and transistor simulation. He has extensive experience in utilizing Silvaco TCAD software for transistor simulation, enabling precise analysis and optimization of semiconductor devices. With a deep understanding of semiconductor materials and device physics, Dr. Mohammadi conducts innovative research in semiconductor device design and characterization. His academic prowess is evident through his publication record, having authored and co-authored multiple research articles in esteemed journals and conference proceedings. Dr. Mohammadi is proficient in experimental design, employing rigorous methods to validate theoretical models and enhance semiconductor device performance. Additionally, he possesses strong data analysis skills, which are instrumental in interpreting experimental results and deriving meaningful insights. Dr. Mohammadi’s problem-solving abilities and analytical skills equip him to tackle complex challenges in semiconductor technology. His research skills underscore his potential to make significant contributions to the field and collaborate effectively within interdisciplinary research teams.

Publications

  1. Publication Title: “Optimizing SOI-MESFET transistor performance at high frequencies by air-oxide layers in the channel and a nickel layer in the box”
    • Authors: Mohammadi, H.; Mohammadi, Y.
    • Journal: Physics Open, 2024, 19, 100214
    • Citations: 0
  2. Publication Title: “Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance”
    • Authors: Naderi, A.; Mohammadi, H.
    • Journal: European Physical Journal Plus, 2021, 136(6), 662
    • Citations: 4
  3. Publication Title: “High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region”
    • Authors: Naderi, A.; Mohammadi, H.
    • Journal: European Physical Journal Plus, 2018, 133(6), 221
    • Citations: 8
  4. Publication Title: “A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications”
    • Authors: Mohammadi, H.; Naderi, A.
    • Journal: AEU – International Journal of Electronics and Communications, 2018, 83, pp. 541–548
    • Citations: 21