Assistant Professor from Nanjing University, China
Dr. Qijing Wang is a dedicated and rapidly emerging scholar in the field of organic electronics. Currently serving as an Assistant Professor at the School of Integrated Circuits, Nanjing University, he has quickly built a reputation for impactful research in charge transport and device physics, particularly in organic field-effect transistors (OFETs). His academic journey has been marked by continuous excellence, with all degrees obtained from the prestigious Nanjing University. Dr. Wang’s scholarly work reflects a deep understanding of electronic science and its applications in advanced materials and device engineering. He has authored several high-impact publications in internationally recognized journals such as Advanced Functional Materials, Small Methods, and ACS Applied Materials & Interfaces. Additionally, his commitment to international collaboration was evident through his postdoctoral research at the University of Cambridge, where he worked under Prof. Henning Sirringhaus. Dr. Wang’s achievements have been recognized through competitive fellowships and national awards, making him a strong candidate for research excellence honors. His career reflects a balanced blend of theoretical knowledge, experimental proficiency, and innovation. As a young academic, Dr. Wang exemplifies the qualities of a future leader in his field, contributing meaningfully to both the academic community and technological advancement in integrated circuits.
Professional Profile
Education
Dr. Qijing Wang received his formal education entirely at Nanjing University, one of China’s premier institutions for science and engineering. He earned his Bachelor of Science degree in Physics in 2012, laying a robust foundational understanding of physical principles that later supported his advanced research in electronics. Building upon his undergraduate education, he pursued a doctoral degree in Electronic Science and Technology at the same university, completing his Ph.D. in 2018. His doctoral studies focused on charge transport mechanisms and the performance enhancement of organic field-effect transistors (OFETs), a research area that positioned him to contribute to cutting-edge developments in organic electronics. Throughout his education, Dr. Wang demonstrated not only academic excellence but also an ability to integrate theoretical physics with practical device engineering. His time as a student at Nanjing University allowed him access to state-of-the-art laboratories, advanced instrumentation, and renowned faculty mentors. These resources equipped him with the skills necessary for conducting high-quality research and developing independent scientific thought. His educational background provides a strong interdisciplinary framework, combining elements of physics, materials science, and electronics, which continues to underpin his professional and academic accomplishments today.
Professional Experience
Dr. Qijing Wang currently serves as an Assistant Professor at the School of Integrated Circuits, Nanjing University. His academic appointment follows a successful tenure as a postdoctoral researcher, during which he significantly contributed to projects on the charge transport and structural optimization of organic semiconductors. As a postdoctoral fellow at Nanjing University, he was selected for the Postdoctoral Innovative Talent Support Program Grant—a highly competitive national program recognizing early-career researchers with exceptional promise. This achievement underscores his ability to undertake independent, innovative research in electronic materials. Further expanding his academic horizon, Dr. Wang spent a period as a visiting postdoctoral researcher at the University of Cambridge, collaborating with Prof. Henning Sirringhaus, a global authority in organic electronics. This international experience enhanced his expertise and enabled cross-border academic engagement. In his current role, Dr. Wang is involved in both teaching and research, mentoring undergraduate and graduate students while leading projects that address challenges in next-generation transistor design. His professional experience reflects a clear progression from student to postdoctoral scholar to independent academic, marked by increasing responsibility, international collaboration, and recognized contributions to the scientific community.
Research Interests
Dr. Qijing Wang’s research interests lie primarily in the field of organic electronics, with a specific focus on charge transport and device physics in organic field-effect transistors (OFETs). He is deeply engaged in exploring the fundamental physical mechanisms that govern the performance of organic semiconductors, aiming to enhance their electronic properties for real-world applications. His work bridges the gap between materials science and circuit-level engineering, addressing both theoretical and experimental challenges. Dr. Wang is particularly interested in the molecular engineering of organic materials to improve charge mobility, stability, and environmental compatibility of OFETs. Additionally, his research encompasses the interface physics between organic materials and metal contacts, dielectric engineering, and nanoscale fabrication techniques. With a growing interest in flexible and wearable electronics, Dr. Wang’s work is increasingly interdisciplinary, contributing to the development of next-generation electronics with applications in healthcare, consumer electronics, and energy devices. His research trajectory demonstrates a commitment to pushing the boundaries of what is possible in organic semiconductors, offering valuable insights into material-device correlations and design strategies. This integrated approach has enabled him to publish in top-tier journals and positions him as a key contributor to the evolution of high-performance, low-cost electronic devices.
Research Skills
Dr. Qijing Wang possesses a comprehensive set of research skills that enable him to excel in the field of organic electronics. His expertise spans both experimental and theoretical domains, particularly in charge transport phenomena, thin-film transistor fabrication, and organic material characterization. He is skilled in using advanced characterization techniques such as atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray diffraction (XRD) to analyze material morphology and structure. In terms of electrical performance, he is proficient in using probe stations and semiconductor parameter analyzers for the precise evaluation of transistor characteristics. Dr. Wang also demonstrates strong competencies in molecular design and solution processing techniques, including spin-coating and inkjet printing, which are essential for developing high-performance OFETs. During his postdoctoral research, he honed his ability to conduct independent experiments, manage collaborative projects, and analyze complex data sets. His international research experience at the University of Cambridge also strengthened his adaptability, scientific communication, and teamwork abilities. Furthermore, he is well-versed in using software tools for data modeling, statistical analysis, and device simulation. These technical proficiencies, combined with his innovative mindset, make him a versatile researcher capable of addressing diverse challenges in materials science and device engineering.
Awards and Honors
Dr. Qijing Wang has received notable recognition for his academic and research excellence early in his career. Among his most prestigious honors is the Postdoctoral Innovative Talent Support Program Grant, awarded during his tenure as a postdoctoral fellow at Nanjing University. This national-level fellowship is one of the most competitive and selective programs in China, aimed at identifying and supporting highly promising early-career researchers. Receiving this grant not only highlights Dr. Wang’s research potential but also affirms his capacity to drive independent and impactful scientific inquiries. His selection for a Visiting Postdoctoral Researcher position at the University of Cambridge further underscores his standing in the academic community. This opportunity allowed him to collaborate with leading researchers in organic electronics and broaden his research capabilities in an international environment. In addition to these distinctions, Dr. Wang’s work has been featured in high-impact journals, signaling peer recognition and scholarly merit. These awards and honors are not only commendations of past achievements but also indicators of his future contributions to science and technology. They reflect his ongoing dedication to innovation, academic excellence, and leadership in the field of organic electronic devices.
Conclusion
In summary, Dr. Qijing Wang stands out as an accomplished and innovative researcher in the domain of organic electronics. His academic foundation, built at Nanjing University, has been enriched through nationally and internationally recognized research experiences. With a focus on organic field-effect transistors, he has made significant strides in understanding and optimizing charge transport mechanisms, contributing valuable knowledge to both academia and industry. His achievements, including high-impact publications and prestigious fellowships, highlight his commitment to scientific rigor and originality. Dr. Wang combines deep technical expertise with a collaborative and forward-thinking approach, evidenced by his research visit to the University of Cambridge and active engagement in interdisciplinary projects. While still early in his academic career, he has shown the qualities of a future leader—innovative thinking, strong communication skills, and a clear vision for advancing technology. Continued emphasis on research leadership roles, mentorship, and broader application of his findings will further enhance his impact. Overall, Dr. Wang is a highly deserving candidate for the Best Researcher Award, with demonstrated excellence and the potential for continued breakthroughs in electronic materials and device research.
Publications Top Notes
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Additive-assisted “metal-wire-gap” process for N-type two-dimensional organic crystalline films
Authors: Yang, C.; Qian, J.; Wang, Q.; Jiang, S.; Duan, Y.; Wang, H.; Dai, H.; Li, Y.
Year: 2019
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PJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories
Authors: Pei, M.; Qian, J.; Jiang, S.; Guo, J.; Yang, C.; Pan, D.; Wang, Q.; Wang, X.; Shi, Y.; Li, Y.
Year: 2019
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Two-dimensional organic materials and their electronic applications
Authors: Wang, H.; Wang, Q.; Li, Y.
Year: 2019
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Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors
Authors: Wang, Q.; Jiang, S.; Qiu, L.; Qian, J.; Ono, L.K.; Leyden, M.R.; Wang, X.; Shi, Y.; Zheng, Y.; Qi, Y. et al.
Year: 2018
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Millimeter-Sized Two-Dimensional Molecular Crystalline Semiconductors with Precisely Defined Molecular Layers via Interfacial-Interaction-Modulated Self-Assembly
Authors: Jiang, S.; Qian, J.; Duan, Y.; Wang, H.; Guo, J.; Guo, Y.; Liu, X.; Wang, Q.; Shi, Y.; Li, Y.
Year: 2018
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Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors
Authors: Wang, Q.; Juarez-Perez, E.J.; Jiang, S.; Qiu, L.; Ono, L.K.; Sasaki, T.; Wang, X.; Shi, Y.; Zheng, Y.; Qi, Y. et al.
Year: 2018
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Temperature dependence of piezo- and ferroelectricity in ultrathin P(VDF-TrFE) films
Authors: Qian, J.; Jiang, S.; Wang, Q.; Yang, C.; Duan, Y.; Wang, H.; Guo, J.; Shi, Y.; Li, Y.
Year: 2018
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Unveiling the piezoelectric nature of polar α-phase P(VDF-TrFE) at quasi-two-dimensional limit
Authors: Qian, J.; Jiang, S.; Wang, Q.; Zheng, S.; Guo, S.; Yi, C.; Wang, J.; Wang, X.; Tsukagoshi, K.; Shi, Y. et al.
Year: 2018
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Directly writing 2D organic semiconducting crystals for high-performance field-effect transistors
Authors: Zhang, Y.; Guo, Y.; Song, L.; Qian, J.; Jiang, S.; Wang, Q.; Wang, X.; Shi, Y.; Wang, X.; Li, Y.
Year: 2017
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Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors
Authors: Wang, Q.; Jiang, S.; Qian, J.; Song, L.; Zhang, L.; Zhang, Y.; Zhang, Y.; Wang, Y.; Wang, X.; Shi, Y. et al.
Year: 2017