Dr. Hadi Hijazi is a postdoctoral researcher specializing in microelectronics and semiconductor nanostructures, with extensive experience in epitaxial growth and device fabrication. Based in Grenoble, France, he has developed a strong academic and research background through work at top-tier institutions such as CEA-LETI, CNRS/LTM, and Saint Petersburg State University. His research encompasses the design, modeling, and experimental development of III-V materials and nanostructures for high-performance optoelectronic devices, including visible and near-infrared LEDs. His doctoral studies focused on the epitaxial growth of GaAs nanowires via HVPE and the investigation of spin and charge transport. Dr. Hijazi possesses deep technical expertise in MOCVD, HVPE, and cleanroom operations, supported by his proficiency in a wide range of characterization tools such as XRD, SEM, AFM, PL, and Raman spectroscopy. In addition to his laboratory capabilities, he is skilled in modeling and simulation using tools like Matlab, Nextnano, and Mathematica. Multilingual and collaborative, Dr. Hijazi has a history of successful international projects, combining both theoretical insight and experimental innovation. His contributions to the field are reflected in quality publications in peer-reviewed journals, and he maintains active connections with research leaders and institutions in France and abroad. He is currently an R&D engineer at CEA LETI, contributing to hybrid bonding technologies.
Professional Profile
Education
Dr. Hadi Hijazi holds a Ph.D. in Physics of Materials from Institut Pascal at Université Clermont Auvergne, France, where he worked on the development of GaAs nanowires grown on Si substrates using hydride vapor phase epitaxy (HVPE). His research addressed charge and spin diffusion in nanowires, integrating fundamental physics with advanced material synthesis techniques. Prior to his doctoral studies, Dr. Hijazi completed a Master’s degree (M2) in Nanoelectronics and Nanotechnology from Université Grenoble Alpes, where he received training in nanoscale materials, semiconductor physics, and cleanroom-based device fabrication. He also holds a Master 1 in Fundamental Physics and Nanoscience from Université Joseph Fourier in Grenoble, which laid the foundation for his later specialization in materials and device engineering. His academic training has been interdisciplinary, with strong emphasis on physics, nanotechnology, materials science, and applied electronics. His formal education has equipped him with theoretical depth and practical skill sets, enabling his contributions to multidisciplinary research involving physical modeling, simulation, and experimental validation of micro- and nanoscale structures. These qualifications have prepared him well for complex problem-solving in research-intensive environments, particularly within the highly competitive field of semiconductor materials and microelectronics.
Professional Experience
Dr. Hadi Hijazi has accumulated a robust portfolio of research and development experience across premier academic and industrial research institutions. Since July 2023, he has been serving as an R&D Engineer at CEA LETI in Grenoble, where he works on hybrid bonding technologies, a critical area for 3D integration in microelectronics. From October 2021 to June 2023, he served as a postdoctoral researcher jointly at CEA-LETI and CNRS/LTM, contributing to the IRT Nanoelec project. During this tenure, he focused on the design and simulation of novel heterostructures using III-(As,P) materials for high-performance visible and NIR LEDs. His work included epitaxial process development (MOCVD) on 300 mm substrates and comprehensive characterization of material and device properties. Prior to this, he was a postdoctoral researcher at ITMO University and Saint Petersburg State University in Russia, focusing on growth modeling of III-V and IV-IV micro/nanostructures. Dr. Hijazi also undertook an industrial internship at CEA LETI in 2016, studying the bonding of refractory metal thin films for 3D technologies. Throughout his career, he has demonstrated the ability to integrate theory, simulation, and fabrication in practical research, aligning well with multidisciplinary goals in microelectronics and optoelectronics innovation.
Research Interests
Dr. Hadi Hijazi’s research interests center around advanced semiconductor materials and their integration into high-performance optoelectronic and microelectronic devices. He is particularly focused on the design, epitaxial growth, and characterization of III-V compound semiconductors on silicon substrates, with the goal of enabling new generations of energy-efficient light sources and integrated photonics. His doctoral work involved HVPE growth of GaAs nanowires on Si(111) substrates, aiming to understand charge and spin transport mechanisms at the nanoscale. His postdoctoral research extended to MOCVD-based fabrication of InGaAs and InP heterostructures for LED applications and included structural and electro-optical characterization. He is also interested in hybrid bonding technologies and 3D integration techniques critical to the future of chip stacking and packaging. Dr. Hijazi combines experimental efforts with simulation and modeling, employing tools like Matlab and Nextnano to optimize nanostructure design and predict growth behavior. He is deeply engaged in the physical understanding of epitaxy, surface/interface interactions, and defect formation. These interests place him at the intersection of materials physics, nanotechnology, and applied engineering, with relevance to optoelectronics, spintronics, and next-generation semiconductor device platforms.
Research Skills
Dr. Hadi Hijazi possesses a comprehensive set of research skills that span theoretical modeling, experimental techniques, and process development in nanotechnology and materials science. His expertise in vapor phase epitaxy, including both MOCVD and HVPE methods, allows him to develop high-quality III-V semiconductor nanostructures on various substrates. He has extensive cleanroom experience and is adept in device fabrication processes, material growth protocols, and post-growth characterization. He is proficient in a range of analytical tools such as XRD, AFM, SEM, Raman spectroscopy, photoluminescence (PL), and electrochemical and C-V measurements. Dr. Hijazi is also skilled in simulation and modeling, using software like Matlab, Mathematica, Nextnano, Python, and C++ to analyze material behaviors and guide experimental design. His strong command of semiconductor physics and nanostructure dynamics supports both fundamental research and practical application development. He is an effective communicator in French, English, and Arabic, and his collaborative approach to research is evident in his successful engagements with multidisciplinary teams across France and Russia. Additionally, his organizational and documentation skills are well-developed, contributing to his ability to manage complex research tasks and publish high-quality scientific articles.
Awards and Honors
While specific named awards are not listed in the available information, Dr. Hadi Hijazi’s inclusion in competitive research programs and positions at prestigious institutions such as CEA-LETI, CNRS, and ITMO University itself serves as recognition of his capabilities and achievements. His acceptance into highly selective doctoral and postdoctoral programs in France and Russia, coupled with his contributions to projects such as IRT Nanoelec, suggests a high degree of merit and recognition by the scientific community. His publications in internationally recognized journals such as Nanotechnology and Journal of Physical Chemistry C also indicate the quality and impact of his research. Furthermore, his involvement in international collaborations and multidisciplinary research teams demonstrates the professional trust placed in his expertise and reliability. His continuing employment at CEA LETI in a research and development role is itself a form of institutional endorsement, affirming his value in the innovation ecosystem of advanced microelectronics. With further dissemination of his work and engagement in academic presentations or grant-funded leadership, it is likely he will accrue formal honors and awards in the near future.
Conclusion
Dr. Hadi Hijazi is an accomplished early-career researcher with strong potential for further growth in the field of semiconductor nanotechnology and microelectronics. His academic training and international research experience have equipped him with both depth and versatility, enabling contributions to next-generation devices through innovations in epitaxial growth, material design, and device integration. His ability to bridge theoretical modeling with experimental realization is a key asset, particularly in collaborative research environments. While his current achievements position him as a valuable team member and emerging expert, more visible research leadership, independent project development, and broader dissemination of research outputs could further strengthen his candidacy for major research awards. At present, Dr. Hijazi would be an ideal candidate for recognitions aimed at emerging scientists or rising researchers, and with continued productivity and impact, he is well-poised to become a leading figure in semiconductor device research. His technical expertise, commitment to quality, and collaborative ethos make him a noteworthy contributor to academic and industrial R&D. As he continues his career at CEA LETI and beyond, further contributions in both applied technologies and fundamental science can be expected.
Publications Top Notes
- Fine Pitch Superconducting Interconnects Obtained with Nb–Nb Direct Bonding
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Authors: Candice M. Thomas, Pablo Renaud, Meriem Guergour, Edouard Deschaseaux, Christophe Dubarry, Jennifer Guillaume, Elisa Vermande, Alain Campo, Frank Fournel, Hadi Hijazi, Anne-Marie Papon, Catherine Pellissier, Jean Charbonnier
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Publication Year: 2025
2. Is NaOH Beneficial to Low Temperature Hybrid Bonding Integration?
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Authors: Hadi Hijazi¹, Paul Noël¹, Samuel Tardif², Karine Abadie¹, Christophe Morales¹, Frank Fournel¹
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Publication Date: October 30, 2024